E208931_HSC278 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode

Main Characteristic
10¹
10⁰
10^−1
10^−2 _{Ta = 75°C}
10^−3
Ta = 25°C
10^−4
10^−5
10^−6
10^−7
10^−8
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V_F (V)
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
HSC278
10^−4
10^−5
Ta = 75°C
10^−6
10^−7
Ta = 25°C
10^−8
0
5
10
15
20
Reverse voltage V_R (V)
Fig.2 Reverse current Vs. Reverse voltage
1.0
0.1
0.1
1.0
10
Reverse voltage V_R (V)
Fig.3 Capacitance Vs. Reverse voltage
Rev.2, Dec. 2000, page 3 of 5