E208931_HSC278 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode

HSC278
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Repetitive peak reverse voltage
Reverse voltage
Non-Repetitive peak forward surge current
Peak forward current
Average rectified current
Junction temperature
V
RRM
V
R
I_FSM *
I_FM
I
O
Tj
Storage temperature
Tstg
Note: 10 msec sine wave 1 pulse
Value
Unit
30
V
30
V
200
mA
150
mA
30
mA
125
°C
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
ESD-Capability *¹
Symbol Min Typ Max
V_F1
— — 0.30
V
— — 0.95
F2
I_R
— — 700
C
— — 1.50
—
100 — —
Note:
1.
Failure
criterion
;
I
R
≥
1.4
µA
at
V
R
=
10
V
Unit
V
nA
pF
V
Test Condition
I_F = 1 mA
I = 30 mA
F
V_R = 10 V
V_R = 1 V, f = 1 MHz
C = 200 pF, R_L = 0 Ω, Both forward and
reverse direction 1 pulse.
Rev.2, Dec. 2000, page 2 of 5