4AK17 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

Typical Transfer Characteristics
50
75°C
40
V_DS = 10 V
Pulse Test
T_C= 25°C
–25°C
30
20
10
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Pulse Test
0.2
V_GS = 4 V
0.1
0.05
10 V
0.02
0.01
0.005
1
2
5 10 20 50 100
Drain Current I_D (A)
4AK17
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 50 A
1
20 A
10 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.10
Pulse Test
I_D = 20 A
0.08
10 A
0.06
V_GS = 4 V
0.04
0.02
V_GS = 10 V
20 A ^{5 A}
10 A
5A
0
–40
0
40
80 120 160
Case Temperature T_C (°C)
5