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4AK17 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array
4AK17
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.045 , VGS = 10 V, ID = 10 A
RDS(on) ≤ 0.065 , VGS = 4 V, ID = 10 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver