2SK2978 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2978
Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
10
0.1 0.2
V_GS = 0, Ta = 25 °C
0.5 1 2
5 10
Reverse Drain Current I _DR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
Coss
100
Crss
30
10
3
VGS = 0
f = 1 MHz
1
0
5
10 15 20 25
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 2.5 A
40
16
V_GS
30
12
V_DD = 10 V
5V
20
8
10
4
V_DD = 10 V
5V
V_DS
0
0
4
8
12 16 20
Gate Charge Qg (nc)
1000
500
Switching Characteristics
V_GS = 4 V, V _DD = 10 V
PW = 5 µs, duty < 1 %
200
100
tf
50
tr
t _d(off)
20
t _d(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current I _D (A)
5