2SK2978 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2978
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.09Ω typ. (V_GS = 4 V, I_D = 1.5 A)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
UPAK
ADE-208-659B (Z)
3rd. Edition
Jun 1998
21
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain