2SK1669 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 100 A/µs, V_GS = 0
Ta = 25°C, Pulse Test
10
5
0.5 1 2
5 10 20
50
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
400
V_GS = 50V
100 V
16
200 V
300
V_GS
12
V_DS
200
8
100
V_DD = 200 V
I_D = 30 A ⁴
100 V
Pulse Test
50 V
0
0
40 80 120 160 200
Gate Charge Qg (nc)
10,000
1,000
2SK1669
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
100
Crss
V_GS = 0
f = 1 MHz
10
0
10
20 30
40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
t_{d (off)}
200
100
t_r
50
t_f
t_{d (on)}
20
V_GS = 10 V, V_DD =.. 30 V
PW = 2 µs, duty < 1%
10
5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
5