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2SK1669 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1669
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
250
V
±30
V
30
A
120
A
30
A
125
W
150
°C
â55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 250
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
â
Zero gate voltage drain current IDSS
â
Gate to source cutoff voltage VGS(off) 2.0
Static drain to source on state RDS(on) â
resistance
Forward transfer admittance |yfs|
12
Input capacitance
Ciss â
Output capacitance
Coss â
Reverse transfer capacitance Crss â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Body to drain diode forward VDF
â
voltage
Body to drain diode reverse trr
â
recovery time
Note 1. Pulse test
Typ Max Unit
â
â
V
â
â
V
â
±10 µA
â
250 µA
â
3.0
V
0.075 0.095 â¦
20
â
S
3100 â
pF
1330 â
pF
190 â
pF
45
â
ns
170 â
ns
270 â
ns
150 â
ns
1.0
â
V
90
â
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 V *1
ID = 15 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 15 A, VGS = 10 V,
RL = 2 â¦
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
2
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