2SK1636 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
4
I_D = 15 A
10 A
2
5A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
V_GS = 10 V
0.8
0.6
I_D = 15 A
10 A
0.4
5A
0.2
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
2SK1636(L), 2SK1636(S)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V_GS = 10 V
0.2
15 V
0.1
0.05
1
2
5 10 20 50 100
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
T_C = –25°C
10
25°C
5
75°C
2
1
0.5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
5