2SK1636 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1636(L), 2SK1636(S)
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
Typical Transfer Characteristics
20
10 V 8 V
5.5 V
16
Pulse Test
5V
12
8
4.5 V
4
4V
V_GS = 3.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
30
100 _µs
10
3
1
0.3
Ta = 25°C
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
Ta = 75°C
4
25°C
–25°C
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
4