2SC5624 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

2SC5624
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−5
−4
−3
−.4
−2
−.6
−.8 _−1
−1.5
Condition ; V_CE = 2 V, I_C = 30 mA
100 to 3000 MHz (100 MHz step)
S21 Parameter vs. Frequency
90
Scale: 12 / div.
120
60
150
30
180
0
−150
−30
−120
−60
−90
Condition ; V_CE = 2 V, I_C = 30 mA
100 to 3000 MHz (100 MHz step)
S12 Parameter vs. Frequency
90
Scale: 0.02 / div.
120
60
150
30
180
0
−150
−30
−120
−60
−90
Condition ; V_CE = 2 V, I_C = 30 mA
100 to 3000 MHz (100 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−.4
−.6
−.8 _−1
−5
−4
−3
−2
−1.5
Condition ; _{VCE = 2 V, IC = 30 mA}
100 to 3000 MHz (100 MHz step)
Rev.2.00, Oct.21.2003, page 5 of 7