2SC5624 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Frequency Low Noise Amplifier

2SC5624
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
Tj
Tstg
Ratings
Unit
10
V
3.5
V
0.8
V
35
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit Test Conditions
Collector to base breakdown V_(BR)CBO 10
—
—
V
voltage
I_C = 10 µA , I_E = 0
Collector cutoff current
I_CBO
—
—
1
µA
V_CB = 8 V , I_E = 0
Collector cutoff current
I_CEO
—
—
1
µA
V_CE = 3 V , R_BE = ∞
Emitter cutoff current
I_EBO
—
—
10
µA
V_EB = 0.8 V , I_C = 0
DC current transfer ratio
h_FE
80
120
160
V_CE = 2 V , I_C = 20 mA
Collector output capacitance Cob
—
0.3
0.6
pF
V_CB = 2 V , I_E = 0
f = 1 MHz
Gain bandwidth product
f_T
25
28
—
GHz
V_CE = 2 V , I_C = 30 mA
f = 2 GHz
Power gain
PG
14
18
—
dB
V_CE = 2 V, I_C = 30 mA
f = 1.8 GHz
Noise figure
NF
—
1.2
1.6
dB
V_CE = 2 V, I_C = 5 mA
f = 1.8 GHz
Rev.2.00, Oct.21.2003, page 2 of 7