2SC2899 Datasheet, PDF (5/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC2899
Saturation Voltage vs. Collector Current
10
l_C = 5 l_B
3
1.0
V_{BE (sat)}
0.3
0.1
V_{CE (sat)}
0.03
T_C = 25°C
0.01
0.001 0.003 0.01 0.03 0.1 0.3 1.0
Collector current I_C (A)
Switching Time vs. Collector Current
10
t_stg
3
1.0
t_f
0.3
t_on
0.1
0.03
0.01
0.001 0.003
0.01
I_C =
V_CC
5=..
I_B1 = –5
150 V
I_B2
0.03 0.1 0.3 1.0
Collector current I_C (A)
Switching Time vs. Case Temperature
5
3
t_stg
1.0
t_f
t_on
0.3
0.1
0.05
0
I_C = 0.5 A
I_B1 = –I_B2 = 0.1 A
VR_CLC^{==.3. 01050Ω}V
25 50 75 100 125
Case temperature T_C (°C)
5