2SC2899 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

2SC2899
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at T_C = 25°C.
Symbol
V_CBO
V_CEO
V_EBO
I_C
I _C(peak)
P_C
P_C * ¹
Tj
Tstg
1. Emitter
2. Collector
3. Base
Ratings
Unit
500
V
400
V
10
V
0.5
A
1.0
A
0.75
W
10
W
150
°C
–55 to +150
°C