HRF503A Datasheet, PDF (4/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRF503A
Main Characteristic
5
0A _t
4
T
Tj =25°C
D= ʕ_Tt
3
2
D=1/6
Sin _D=1/3
D=1/2
DC
1
0
0
12
345 6
Forward current I _F (A)
Fig.4 Forward p ower dissipation Vs. Forward current
12
0V
10
t
T
D= ʕ_Tt
Tj =125°C
8
6
4
D=5/6
D=2/3
D=1/2
Sin
2
0
0
10
20
30
40
Reverse voltage V _R(V)
Fig.5 Reverse power dissipation Vs. Reverse voltage
6
5
4 _D=1/3
3
D=1/6
2
VR=15V
Tj =125°C
DC
Sin
D=1/2
1
0
-25 0 25 50 75 100 125
Case temperature Tc (°C)
Fig.6 Average forward current Vs. Case temperature
6
5
DC
4
VR=15V
Tj =125°C
Glass epoxy PCB
3
2
D=1/3
1
D=1/6
D=1/2
Sin
0
-25 0 25 50 75 100 125
Ambient temperature Ta (°C)
Fig.7 Average forward current Vs. Ambient temperature
4