HRF503A Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRF503A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Repetitive peak reverse
V *1
RRM
voltage
Average rectified current
Non-Repetitive peak
forward surge current
I
*1
o
I *2
FSM
Junction temperature
Tj
Storage temperature
Tstg
Notes: 1. See from Fig.4 to Fig.7
2. 10msec half sine wave 1 pulse
Value
35
5
100
125
–40 to +125
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
V_F1
—
V_F2
—
Reverse current
I_R
—
Thermal resistance Rth(j-a) —
0.38
—
—
75
—
0.45
1.0
—
V
mA
°C/W
I_F = 3A
I_F = 5A
V_R = 35V
Glass epoxy board ^*1
Rth(j-c) — 35 —
Tc = 25°C
Note: 1. Glass epoxy board
Land size
3.5
6.8
2.0 _{Unit: mm}
2