HRF22 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRF22
Main Characteristic
1.0
DC
0A _t
0.8
T
D= ^t \
T
D=1/2
Sin
D=1/3
0.6
D=1/6
0.4
0.2
0
0
0.4
0.8
1.2
1.6
Forward current I _F (A)
Fig.4 Forward p ower dissipation Vs. Forward current
0.25
0V
0.20
t _D= t _\
T
T
0.15
0.10
0.05
DC
D=5/6
D=2/3
D=1/2
Sin
0
0
10
20
30
40
Reverse voltage V _R(V)
Fig.5 Reverse power dissipation Vs. Reverse voltage
1.6
DC
VR=VRRM
1.4
Tj=125°C
Alumina Board
1.2
D=1/2
1.0
0.8
D=1/6
0.6
0.4
Sin
D=1/3
0.2
0
0
25 50
75 100 125
Ambient temperature Ta (°C)
Fig.6 Average forward current Vs. Ambient temperature
1.6
1.4 ^DC
VR=VRRM
Tj=125°C
Print Board
1.2
D=1/2
1.0
0.8 _D=1/3
0.6 _D=1/6
0.4
Sin
0.2
0
0
25 50
75 100 125
Ambient temperature Ta (°C)
Fig.7 Average forward current Vs. Ambient temperature
4