HRF22 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

HRF22
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Repetitive peak reverse
V *1
RRM
voltage
Average rectified current
Non-Repetitive peak
forward surge current
I
*1
o
I *2
FSM
Junction temperature
Tj
Storage temperature
Tstg
Note: 1. See from Fig.4 to Fig.7
Note: 2. 10msec half sine wave 1 pulse
Value
40
1.0
20
125
-40 to +125
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
V_F
Reverse current
I_R
ESD-Capability
—
——
——
150 —
0.55 V
1.0 mA
—V
I_F = 1.0A
V_R = 40V
C=200pF , R=0Ω, Both forward and reverse
direction 1 pulse.
Thermal resistance Rth(j-a) — — 108 °C/W Alumina board ^*1
— — 157
Print board ^*2
Note: 1. Alumina board
(25mm ~25mm ~0.64t
2.0mm
4.2mm
Note: 2. Print board
(25mm ~25mm ~1.64t
2.0mm
4.2mm
2