HN58X24128I Datasheet, PDF(4/22 Page) Hitachi Semiconductor – Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit)

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HN58X24128I Datasheet, PDF (4/22 Pages) Hitachi Semiconductor – Two-wire serial interface, 128k EEPROM (16-kword x 8-bit), 256k EEPROM (32-kword x 8-bit)

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HN58X24128I/HN58X24256I

DC Operating Conditions

Parameter

Symbol Min

Typ

Supply voltage

Input high voltage

Input low voltage

Operating temperature

VCC

VSS

VIH

VIL

Topr

1.8

VCC Ã 0.7 â

â0.3*1

â40

Notes: 1. VIL (min): â1.0 V for pulse width â¤ 50 ns.

Max

5.5

VCC + 1.0

VCC Ã 0.3

Unit

ËC

DC Characteristics (Ta = â40 to +85ËC, VCC = 1.8 V to 5.5 V)

Parameter

Symbol Min Typ Max Unit Test conditions

Input leakage current

I LI

2.0

ÂµA

VCC = 5.5 V, Vin = 0 to 5.5 V

Output leakage current ILO

2.0

ÂµA

VCC = 5.5 V, Vout = 0 to 5.5 V

Standby VCC current

I SB

1.0

3.0

ÂµA

Vin = VSS or VCC

Read VCC current

I CC1

1.0

VCC = 5.5 V, Read at 400 kHz

Write VCC current

I CC2

5.0

mA VCC = 5.5 V, Write at 400 kHz

Output low voltage

VOL2

0.4

VCC = 4.5 to 5.5 V, IOL = 1.6 mA

VCC = 2.7 to 4.5 V, IOL = 0.8 mA

VCC = 1.8 to 2.7 V, IOL = 0.4 mA

VOL1

0.2

VCC = 1.8 to 2.7 V, IOL = 0.2 mA

Capacitance (Ta = 25ËC, f = 1 MHz)

Parameter

Test

Symbol Min

Typ

Max

Unit

conditions

Input capacitance (A0 to A2, SCL, WP) Cin*1

6.0

Vin = 0 V

Output capacitance (SDA)

CI/O* 1

Note: 1. This parameter is sampled and not 100% tested.

6.0

Vout = 0 V

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