HAF2002 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching

HAF2002
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
Thermal shut down
200 _{Operation area}
100
20 µs
50
20
10
5
2
1
100 _µs
Oispliemraittieodnbiy^Dn ^C_Rth^Oi_Ds^p_Sa^e₍r^r_o^ae_n^taⁱ₎^{onPW(Tc==1102m5ms°sC)}
0.5 _{Ta = 25 °C}
0.3 _{0.5 1 2 5 10 20}
50 100
Drain to Source Voltage V DS(V)
4