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HAF2002 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET Series Power Switching
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HAF2002
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain current
I D1
10
—
—
A
VGS = 3.5V, VDS = 2V
Drain current
I D2
—
—
10
mA
VGS = 1.2V, VDS = 2V
Drain to source breakdown
V(BR)DSS
60
—
—
V
ID = 10mA, VGS = 0
voltage
Gate to source breakdown
V(BR)GSS
16
—
—
V
IG = 100µA, VDS = 0
voltage
Gate to source breakdown
V(BR)GSS
–2.8 —
—
V
IG = –100µA, VDS = 0
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
I GSS1
I GSS2
I GSS3
I GSS4
I GS(op)1
I GS(op)2
I DSS
VGS(off)
RDS(on)
—
—
100
µA
VGS = 8V, VDS = 0
—
—
50
µA
VGS = 3.5V, VDS = 0
—
—
1
µA
VGS = 1.2V, VDS = 0
—
—
–100 µA
VGS = –2.4V, VDS = 0
—
0.8
—
mA
VGS = 8V, VDS = 0
—
0.35 —
mA
VGS = 3.5V, VDS = 0
—
—
250
µA
VDS = 50 V, VGS = 0
1.0
—
2.25 V
ID = 1mA, VDS = 10V
—
50
65
mΩ
ID = 10A, VGS = 4V Note3
Static drain to source on state RDS(on)
—
30
43
mΩ
ID = 10A, VGS = 10V Note3
resistance
Forward transfer admittance
|yfs|
6
12
—
S
ID = 10A, VDS = 10V Note3
Output capacitance
Coss
—
630 —
pF
VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward
VDF
voltage
—
7.5
—
µs
ID = 5A, VGS = 5V
—
29
—
µs
RL = 6Ω
—
34
—
µs
—
26
—
µs
—
1.0
—
V
IF = 20A, VGS = 0
Body–drain diode reverse
t rr
recovery time
—
110 —
ns
IF = 20A, VGS = 0
diF/ dt =50A/µs
Over load shut down
t os1
—
1.8
—
ms
VGS = 5V, VDD = 12V
operation time Note4
t os2
—
0.7
—
ms
VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load
condition.
See characteristic curve of HAF2001.
3
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