4AM17 Datasheet, PDF (4/7 Pages) Hitachi Semiconductor – Silicon N/P Channel MOS FET High Speed Power Switching

4AM17
( P Channel )
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltage drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
–60
±20
—
—
–1.0
—
—
3.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Gate series resistance
Rg
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 3. Pulse test
Typ
—
—
—
—
—
0.15
0.2
6.0
17
460
1.2
3.2
0.6
2.1
12
5.8
–1.2
2.5
Max Unit
—
V
—
V
±10 µA
–250 µA
–2.5 V
0.2 Ω
0.27 Ω
—
S
—
pF
—
pF
—
pF
—
kΩ
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = –50 V, V_GS = 0
V_DS = –10 V, I _D = –1 mA
I_D = –4 A, V_GS = –10 V ^Note3
I_D = –4 A, V_GS = –4 V ^Note3
I_D = –4 A, V_DS = –10 V ^Note3
V_DS = –10 V
V_GS = 0
f = 1 MHz
V_DS = 0, V_GS = 0 f = 1 MHz
V_GS = –10 V, I_D = –4 A
R_L = 7.5 Ω
I_F = –8 A, V_GS = 0
I_F = –8 A, V_GS = 0
diF/ dt = 50 A/ µs
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