4AM17 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N/P Channel MOS FET High Speed Power Switching

4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
N Channel: R_DS(on) ≤0.17 Ω, V_GS = 10 V, I_D = 4 A
P Channel : R_DS(on) ≤ 0.2 Ω, V_GS = –10 V, I_D = –4 A
• 4 V gate drive devices.
• High density mounting
Outline
SP-12
ADE-208-729 (Z)
1st. Edition
February 1999
1
G
2
D5
G
4
D8
G
9
D ₁₂
G
11
D
1 _{2 3 4 5 6 7 8 9101112}
S3
S6
S7
S 10
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source