4AK21 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

4AK21
Maximum Channel Dissipation Curve
6
Condition : Channel Dissipation of
each die is identical
5
4 Device Operation
4
3 Device Operation
2 Device Operation
3
1 Device Operation
2
1
0
25 50 75 100 125 150
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
30
Condition : Channel Dissipation of
each die is identical
4 Device Operation
3 Device Operation
20
2 Device Operation
1 Device Operation
10
0
25 50 75 100 125 150
Case Temperature T_C (°C)
Maximum Safe Operation Area
50
10 µs
20
10
PW
5
2
1
= _{10 ms (1 Shot )}
0.5
0.2
Ta = 25°C
0.1
0.05
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain to Source Voltage V_DS (V)
4