4AK21 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel Power MOS FET Array

4AK21
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
R_DS(on) 0.09 , V_GS = 10 V, I_D = 4 A
R_DS(on) 0.12 , V_GS = 4 V, I_D = 4 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for motor driver, solenoid driver and lamp driver
• Discrete packaged devices of same die: 2SK1302, 2SK1307