2SK3136 Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3136
Main Characteristics
Power vs. Temperature Derating
200
150
100
50
0
50
100
150
200
Case Temperature Tc (°C)
1000
300
100
30
10
3
1
Maximum Safe Operation Area
PW
=
DC
Operation in
this area is
(O1T0pcem=ras2ti5(o1°nCs¹_)h^mo¹_t^0s₎ ^{01µ0sµs}
limited by R DS(on)
0.3
0.1 ^{Ta = 25°C}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
100
4V
80
5V
V_GS = 10 V
60
3.5 V
Pulse Test
40
3V
20
2.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
100
V _DS = 10 V
Pulse Test
80
60
40
75°C
25°C
20
Tc = –25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
4