|
2SK3136 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
|
2SK3136
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 4.5 m⦠typ.
⢠Low drive current
⢠4 V gate drive device can be driven from 5 V source
Outline
TOâ220AB
D
ADE-208-696B (Z)
3rd. Edition
February 1999
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source
|
▷ |