2SK1809 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1809
Power vs. Temperature Derating
90
60
30
0
50
100
150
Case Temperature Tc (°C)
Maximum Safe Operation Area
50
30
10
10 _µs
3
DC
1
0.3
0.1
Operation in this
area is limited
by R_DS(on)
Ta = 25°C
Operation _{(Tc = 25°C)}
0.05
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
0.3
0.2
0.1
0.1 0.05
0.02
0.03
0.01
1 shot Pulse
0.01
10 µ
100 µ
1m
Tc = 25°C
10 m
θ ch – c(t) = ^γ s(t) ^. θ ch – c
θ ch – c = 2.08°C / W, Tc = 25°C
P DM
D
=
PW
T
PW
T
100 m
1
10
Pulse Width PW (S)
4