2SK1809 Datasheet, PDF(3/6 Page) Hitachi Semiconductor

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2SK1809 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1809

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ Max

Drain to source breakdown

V(BR)DSS

600

voltage

Gate to source breakdown

V(BR)GSS

Â±30

voltage

Gate to source leak current IGSS

Â±10

Zero gate voltage drain current IDSS

250

Gate to source cutoff voltage VGS(off)

2.0

3.0

Static drain to source on state RDS(on)

resistance

1.1

1.5

Forward transfer admittance |yfs|

3.0

5.0

Input capacitance

Ciss

Output capacitance

Coss â

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note 1. Pulse Test

1000 â

250 â

105 â

0.9

500 â

Unit

ÂµA

â¦

Test Conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 500 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2.5A

VGS = 10 V*1

ID = 2.5 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2.5 A

VGS = 10 V

RL = 12 â¦

IF = 5 A, VGS = 0

IF = 5 A, VGS = 0,

diF / dt = 100 A / Âµs

See characteristic curves of 2SK1404

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