2SK1808 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1808
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature Tc (°C)
Maximum Safe Operation Area
10
3
1
OilnpimethritaiestdioabnreyaRis^{DS (on)}
10 _µs
1 _ms
0.3
0.1
0.03 _{Ta = 25°C}
0.01
1
3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
Tc = 25°C
0.3 _0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
10 µ
1 shot Pulse
100 µ
θ ch – c(t) = ^γ s(t) ^. θ ch – c
θ ch – c = 3.57°C / W. Tc = 25°C
P DM
D
=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
4