2SK1808 Datasheet, PDF(3/6 Page) Hitachi Semiconductor

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2SK1808 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1808

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ

Drain to source breakdown

V(BR)DSS

900

voltage

Gate to source breakdown

voltage

V(BR)GSS

Â±30

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

3.0

resistance

Forward transfer admittance |yfs|

1.7 2.7

Input capacitance

Ciss

740

Output capacitance

Coss â

305

Reverse transfer capacitance Crss

150

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

100

0.9

Body to drain diode reverse trr

recovery time

800

Note 1. Pulse Test

Max Unit

Â±10 ÂµA

250 ÂµA

3.0 V

4.0 â¦

Test Conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 720 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A

VGS = 10 V*1

ID = 2 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2 A

VGS = 10 V

RL = 15 â¦

IF = 4 A, VGS = 0

IF = 4 A, VGS = 0,

diF / dt = 100 A / Âµs

See characteristic curves of 2SK1340

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