2SK1671 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1671
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 20 A
1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.2
0.16
V_GS = 10 V
Pulse Test
I_D = 30 A
20 A
0.12
10 A
0.08
0.04
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2 ^{Pulse Test}
0.1
0.05
V_GS = 10, 15 V
0.02
0.01
0.005
1
2
5 10 20 50 100
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
Pulse Test
20
T_C = –25°C
25°C
10
75°C
5
2
1
0.5
0.5 1 2
5 10 20
50
Drain Current I_D (A)
4