2SK1671 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V
8V
Pulse Test
6V
40
5V
30
4.5 V
20
10
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
2SK1671
1,000
300
100
30
10
3
1
Maximum Safe Operation Area
OpiselriamtiiotendinbDytChRisO^DaSPpre⁽_eW^oan_r⁾_{a=tio1n0(mT1Csm1=(01s201S50µh°sC}^µ_ost))
0.3
Ta = 25°C
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
40
V_DS = 10 V
Pulse Test
30
20
10
T_C = 75°C
25°C
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
3