2SK1670 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1670
Power vs. Temperature Derating
120
80
40
0
50
100
150
Case Temperature T_C (°C)
1,000
Maximum Safe Operation Area
300
100
30
10
3
1
Ta ^{D=C2O5p°PCeWrati=on10(TmC1s=m1(021s05S1°µ}_Ch0so)^µt)s
0.3
Operation in this area
is limited by R_{DS (on)}
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3 _0.2
0.1
0.1
0.05
0.03
0.01
0.02
0.01
1 ^Shot
Pulse
10 µ
100 µ
T_C = 25°C
θch–c (t) = γ_S (t) · θch–c
θch–c = 2.08°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
4