2SK1670 Datasheet, PDF(3/6 Page) Hitachi Semiconductor

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2SK1670 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1670

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 250

Gate to source breakdown

voltage

V(BR)GSS Â±30

Gate to source leak current

I GSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off) 2.0

Static drain to source on state RDS(on) â

resistance

Forward transfer admittance |yfs|

Input capacitance

Ciss â

Output capacitance

Coss â

Reverse transfer capacitance Crss â

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note 1. Pulse test

Typ Max Unit

Â±10 ÂµA

250 ÂµA

3.0

0.075 0.095 â¦

3100 â

1330 â

190 â

170 â

270 â

150 â

1.0

Test conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 15 A, VGS = 10 V *1

ID = 15 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 15 A, VGS = 10 V,

RL = 2 â¦

IF = 30 A, VGS = 0

IF = 30 A, VGS = 0,

diF/dt = 100 A/Âµs

See characteristic curves of 2SK1669.

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