2SK1668 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1668
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
50
30
10
3
1.0
100
10
µ_s
µ_s
Operation in thDisCaOrpePeWarat=io1n0(Tmc1s=(m12s5s°hCo)t)
0.3 is limited by R _DS (on)
Ta = 25°C
0.1
0.05
1
3
10
30 100 300
Drain to Source Voltage V_DS (V)
1000
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
10 µ
1 ^{shot Pulse}
0.01
100 µ
1m
10 m
Pulse Width PW (S)
Tc = 25°C
θ ch – c(t) = ^γ s(t) ^. θ ch – c
θ ch – c = 4.17°C / W, Tc = 25°C
P DM
D
=
PW
T
PW
T
100 m
1
10
4