2SK1668 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1668
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
voltage
V_(BR)DSS 250
—
Gate to source breakdown
voltage
V_(BR)GSS ±30
—
Gate to source leak current
I _GSS
—
—
Zero gate voltage drain current I_DSS
—
—
Gate to source cutoff voltage V_GS(off) 2.0
—
Static drain to source on state R_DS(on) —
0.4
resistance
Forward transfer admittance |y_fs|
3.0
5.0
Input capacitance
Ciss —
690
Output capacitance
Coss —
265
Reverse transfer capacitance Crss —
45
Turn-on delay time
t _d(on)
—
13
Rise time
t_r
—
55
Turn-off delay time
t _d(off)
—
65
Fall time
t_f
—
37
Body to drain diode forward V_DF
—
1.0
voltage
Body to drain diode reverse t_rr
recovery time
—
180
Note 1. Pulse test
Max
—
—
±10
250
3.0
0.55
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 200 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 4 A, V_GS = 10 V *¹
I_D = 4 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 4 A, V_GS = 10 V,
R_L = 7.5 Ω
I_F = 7 A, V_GS = 0
I_F = 7 A, V_GS = 0,
di_F/dt = 100 A/µs
See characteristic curves of 2SK1667.
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