2SK1628 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1628, 2SK1629
Power vs. Temperature Derating
300
200
100
0
50
100
150
Case Temperature T_C (°C)
Maximum Safe Operation Area
500
200
100
50
1001_µ^0s_µs
20
10
5
2
Ta
=
DC
25°C
PW
Operation
= ₁₀
(T
C₌
1 _ms
ms ₍₁
25°C)
Shot)
1
2SK1628
0.5
2SK1629
1 3 10 30 100 300
1,000
Drain to Source Voltage V_DS (V)
3
D=1
1
0.5
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
1
0.01
Shot
Pulse
0.01
10 µ
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
T_C = 25°C
θch–c (t) = γ_S (t) · θch–c
θch–c = 0.625°C/W, T_C = 25°C
P_DM
°C/W
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
4