2SK1628 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1628, 2SK1629
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1628
2SK1629
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at T_C = 25°C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
30
A
120
A
30
A
200
W
150
°C
–55 to +150
°C
2