2SK1338 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1338
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
30
20
I_D = 3 A
2A
10
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
20
V_GS = 10 V
Pulse Test
16
I_D = 3 A
12
2A
1A
8
4
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 10 V
5
15 V
2
1
0.5
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 20 V
Pulse Test
2
1
–25°C
0.5
T_C = 25°C
75°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
4