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2SK1338 Datasheet, PDF (2/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1338
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
Unit
900
V
±30
V
2
A
6
A
2
A
50
W
150
°C
â55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
voltage
V(BR)DSS 900
â
Gate to source breakdown
voltage
V(BR)GSS ±30
â
Gate to source leak current
I GSS
â
â
Zero gate voltage drain current IDSS
â
â
Gate to source cutoff voltage VGS(off) 2.0
â
Static drain to source on state RDS(on) â
5.0
resistance
Forward transfer admittance |yfs|
0.9
1.5
Input capacitance
Ciss â
425
Output capacitance
Coss â
175
Reverse transfer capacitance Crss â
85
Turn-on delay time
t d(on)
â
10
Rise time
tr
â
35
Turn-off delay time
t d(off)
â
60
Fall time
tf
â
50
Body to drain diode forward VDF
â
0.9
voltage
Body to drain diode reverse trr
recovery time
â
700
Note: 1. Pulse test
Max
â
â
±10
250
3.0
7.0
â
â
â
â
â
â
â
â
â
â
Unit
V
V
µA
µA
V
â¦
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1 A, VGS = 10 V *1
ID = 1 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 30 â¦
IF = 2 A, VGS = 0
IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
2
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