2SK1306 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1306
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Maximum Safe Operation Area
100
30
10
3
DC
PW
=
Operation
10
(T
10
1
100
ms
µ_s
ms _{(1 shot)}
µ_s
1.0
C
Operation in this Area
is Limited by R_{DS (on)}
= _25°C)
0.3
Ta = 25°C
0.1
1
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
3
1.0 ^{D = 1}
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
T_C = 25°C
0.3 _0.2
0.1
0.1
0.05
0.02
0.03
0.01
1 ^Shot
Pulse
0.01
10 µ
100 µ
θch–c (t) = γ_S (t) · θch–c
θch–c = 4.17°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
4