2SK1306 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1306
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D
12 ₃
1. Gate
G
2. Drain
3. Source
S