2SJ506 Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ506(L), 2SJ506(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
–500
–200 ^{Ta = 25 °C}
–100
–50
10 _µs
–20
–10
–5
–2
–1
–0.5
–0.2
Operation in
this area is
DPCWO=p(Te1cr0a=tmio2sn5¹¹_(°1^0m_Cs⁰_)h^s_o^µ_t^s₎
limited by R _DS(on)
–0.1
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20 –50
Drain to Source Voltage V _DS (V)
Typical Output Characteristics
–10 V ^{–8 V}
–20
–4.5 V
Pulse Test
–5 V
–16
–6 V
–4 V
–12
–3.5 V
–8
–3 V
–4
V_GS = –2.5 V
0
–4 –8 –12 –16 –20
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
–20
V _DS = –10 V
25 °C
Pulse Test
–16
–12
–8
–4
75 °C
Tc = –25 °C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V _GS (V)
4