2SJ506 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
• Low on-resistance
R_DS(on) = 0.065 Ω typ. (at V_GS = –10V, I_D = –5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
DPAK–2
D
G
S
4
4
12 ₃
12 ₃
1. Gate
2. Drain
3. Source
4. Drain