2SC4308 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

2SC4308
Collector to Emitter Saturation
Voltage vs. Collector Current
1.0
Ta = 75°C
25
0.1
–25
I_C = 10 I_B
Pulse Test
0.01
1
10
100
1,000
Collector Current I_C (mA)
Collector Output Capacitance
vs. Collector Current
100
f = 1 MHz
I_E = 0
10,000
Gain Bandwidth Product vs.
Collector Current
V_CE = 5 V
1,000
100
1
10
100
1,000
Collector Current I_C (mA)
Emitter Input Capacitnce vs.
Emitter to Base Votlage
100
f = 1 MHz
I_C = 0
10
10
1
10
100
Collector to Base Voltage V_CB (V)
1
0.1
1.0
10
Emitter to Base Voltage V_EB (V)
4