2SC4308 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar

2SC4308
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
i_{C (peak)}
P_C
Tj
Tstg
Ratings
Unit
30
V
20
V
3
V
300
mA
500
mA
600
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V_(BR)CBO
30
—
—
V
voltage
I_C = 100 µA, I_E = 0
Collector to emitter breakdown V_(BR)CEO 20
—
—
V
voltage
I_C = 1 mA, R_BE = ∞
Collector cutoff current
I _CBO
Emitter cutoff current
I _EBO
DC current transfer ratio
h_FE
Gain bandwidth product
f_T
Collector output capacitance Cob
—
—
1
µA
V_CB = 25 V, I_E = 0
—
—
10
µA
V_EB = 3 V, I_E = 0
50
—
200
V_CE = 5 V, I_C = 50 mA
1.5
2.5
—
GHz V_CE = 5 V, I_C = 50 mA
—
4.0 —
pF
V_CB = 10 V, I_E = 0, f = 1 MHz
2