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HVU359 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCXO
◁
Main Characteristic
10 -9
10-10
10-11
10-12
10-13
0
4
8
12 16 20
Reverse voltage VR (V)
Fig.1 Reverse current Vs. Reverse voltage
30
f=1MHz
25
20
15
10
5
0
1.0
10
30
Reverse voltage VR (V)
Fig.2 Capacitance Vs. Reverse voltage
HVU359
3
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