HVU359 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Variable Capacitance Diode for VCXO

HVU359
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
V_R
Tj
Tstg
Value
Unit
15
V
125
°C
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Reverse current
Capacitance
Capacitance ratio
Series resistance
ESD-Capability^*1
Symbol Min Typ Max
I _R1
— — 10
I _R2
— — 100
C₁
24.8 — 29.8
C₄
6.0 — 8.3
n
3.0 — —
r_s
— — 1.5
—
80 — —
Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V
Unit
nA
pF
—
Ω
V
Test Condition
V_R = 10V
V_R = 10V, Ta = 60 °C
V_R = 1V, f = 1 MHz
V_R = 4V, f = 1 MHz
C₁/ C₄
V_R = 4V, f = 100 MHz
C=200pF , Both forward and reverse direction
1 pulse.
2