HRC0203B Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Main Characteristic
HRC0203B
1.0
10^-1
Ta=75°C
10^-2
Ta=25°C
10^-3
Pulse test
10^-4
10^-5
10^-6
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V _F (V)
Fig.1 Forward current Vs. Forward voltage
0.30
0.25
0.20
0A _t
T
Tj =25°C
D= ^t \
T
0.15
0.10
D=1/6
D=1/3
Sin
( ˘=180°)
D=1/2
DC
0.05
0
0 _{0.05 0.10 0.15 0.20 0.25}
Forward current I _F (A)
Fig.3 Forward power dissipation Vs. Forward current
10^-2
Pulse test
10^-3
10^-4
Ta=75°C
10^-5
Ta=25°C
10^-6
10^-7 ₀
10 20 30 40 50
Reverse voltage V _R(V)
Fig.2 Reverse current Vs. Reverse voltage
0.6
0V
0.5
t _D= t _\
T
T
Tj =125°C
0.4
0.3
0.2
0.1
D=5/6
D=2/3
D=1/2
Sin( ˘=180°)
0
0
10
20
30
40
Reverse voltage V _{R @}(V)
Fig.4 Reverse power dissipation Vs. Reverse voltage
3